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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2706TP
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.
ORDERING INFORMATION
PART NUMBER PACKAGE Power HSOP8
PA2706TP
FEATURES
* Low on-state resistance RDS(on)1 = 15 m MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 m MAX. (VGS = 4.5 V, ID = 5.5 A) * Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V) * Small and surface mount package (Power HSOP8)
ABSOLUTE MAXIMUM RATINGS (TA = 25C, Unless otherwise noted, all terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (DC)
Note1 Note2
VDSS VGSS ID(DC)1 ID(DC)2 ID(pulse) PT1 PT2 Tch Tstg
30 20 20 11 44 15 3 150 -55 to +150 11 12.1
V V A A A W W C C A mJ
Drain Current (pulse)
Total Power Dissipation (TC = 25C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3 Note1
IAS EAS
Notes 1. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec 2. PW 10 s, Duty Cycle 1% 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , L = 100 H, VGS = 20 0 V Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16621EJ1V0DS00 (1st edition) Date Published January 2004 NS CP(K) Printed in Japan
2003
PA2706TP
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage
Note
SYMBOL IDSS IGSS VGS(off) | yfs |
Note
TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VGS = 4.5 V, ID = 5.5 A VGS = 4.0 V, ID = 5.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 5.5 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 4.5 11 16 19 660 270 83 9 5 29 6
2.5
Forward Transfer Admittance Drain to Source On-state Resistance
RDS(on)1 RDS(on)2 RDS(on)3
15 22.5 29
m m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 15 V VGS = 5.0 V ID = 11 A IF = 11 A, VGS = 0 V IF = 11 A, VGS = 0 V di/dt = 100 A/s
7.1 2.1 3.1 0.84 25 17
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G16621EJ1V0DS
PA2706TP
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
20
PT - Total Power Dissipation - W
15
10
5
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100
ID(DC)
ID(pulse) PW = 100 s
ID - Drain Current - A
10
DC 1 ms 10 ms RDS(on) Limited (at VGS = 10 V)
1
Power Dissipation Limited
0.1
TC = 25C Single pulse
0.01 0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A): Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, TA = 25C Rth(ch-C): TC = 25C
Rth(ch-A)
100
10 Rth(ch-C) = 8.33C/W 1
0.1 100
1m
10 m
100 m 1 PW - Pulse Width - s
10
100
1000
Data Sheet G16621EJ1V0DS
3
PA2706TP
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
50 45
ID - Drain Current - A
VGS = 10 V
100
Pulsed
ID - Drain Current - A
40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2
VDS - Drain to Source Voltage - V
VDS = 10 V Pulsed TA = -55C 25C 75C 150C
4.5 V 4.0 V
10
1
0.1
0.01 0 1 2 3 4 5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
3
VGS(off) - Gate Cut-off Voltage - V
100 VDS = 10 V Pulsed 10 TA = -55C 25C 75C 150C
2.5 2 1.5 1 0.5 0 -50 0 50
VDS = 10 V ID = 1 mA
1
100
150
0.1 0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
30 Pulsed 25 20 15 10 5 0 0.1 1 10 100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
30 Pulsed 25 20 15 10 5 0 0 5 10 15 20
VGS - Gate to Source Voltage - V
VGS = 4.0 V
4.5 V
ID = 5.5 A
10 V
4
Data Sheet G16621EJ1V0DS
PA2706TP
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
40 35 30 25 20 15 10 5 0 -50
Ciss, Coss, Crss - Capacitance - pF
Pulsed VGS = 4.0 V
1000 Ciss
4.5 V 10 V
100
Coss
Crss VGS = 0 V f = 1 MHz 10 0.01 0.1 1 10 100
0
50
100
150
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
30
6 VDD = 24 V 15 V 6V 5 4 VGS 3 2 VDS ID = 11 A 1 0 0 2 4 6 8
QG - Gate Charge - nC VGS - Gate to Source Voltage - V
VDD = 15 V VGS = 10 V RG = 10 100 tf td(off) td(on)
25 20 15 10 5 0
10 tr 1 0.1 1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
100
trr - Reverse Recovery Time - ns
1000 Pulsed VGS = 0 V di/dt = 100 A/s 100
IF - Diode Forward Current - A
10
VGS = 10 V
0V
1
10
0.1
0.01 0 0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
1 1 10
IF - Diode Forward Current - A
100
Data Sheet G16621EJ1V0DS
5
PA2706TP
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR
100
IAS - Single Avalanche Current - A Energy Derating Factor - %
120
VDD = 15 V RG = 25 VGS = 20 0 V Starting Tch = 25C
100 80 60 40 20 0
V DD = 15 V RG = 25 V GS = 20 0 V IAS 11 A
10 EAS = 12.1 mJ
1 0.00001
0.0001
0.001
0.01
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
PACKAGE DRAWING (Unit: mm)
Power HSOP8
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain
1.49 0.21
1.44 TYP.
1 5.2 +0.17 -0.2
4 0.8 0.2 S
+0.10 -0.05
6.0 0.3 4.4 0.15
0.05 0.05
0.15
1.27 TYP. 0.40
1
+0.10 -0.05
0.10 S 0.12 M
2.0 0.2
2.9 MAX.
9 4.1 MAX.
8
5
EQUIVALENT CIRCUIT
Drain
1.1 0.2
4
Gate
Body Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional
Gate Protection Diode
protection circuit is externally required if a voltage exceeding the rated
Source
voltage may be applied to this device.
6
Data Sheet G16621EJ1V0DS
PA2706TP
* The information in this document is current as of January, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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